Infineon IPB80N06S4L-07 N-channel MOSFET Transistor, 80 A, 60 V, 3-pin TO-263
- RS 재고 번호:
- 857-4530
- 제조 부품 번호:
- IPB80N06S4L-07
- 제조업체:
- Infineon
Subtotal (1 reel of 1000 units)*
₩1,000,350.00
단위당 | 한팩당 | 릴당* |
|---|---|---|
| 1000 - 1000 | ₩1,000.35 | ₩1,000,545.00 |
| 2000 - 4000 | ₩850.20 | ₩849,420.00 |
| 5000 + | ₩805.35 | ₩804,960.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 재고 번호:
- 857-4530
- 제조 부품 번호:
- IPB80N06S4L-07
- 제조업체:
- Infineon
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 60 V | |
| Maximum Drain Source Resistance | 11.3 mΩ | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Package Type | TO-263 | |
| Mounting Type | Surface Mount | |
| Transistor Configuration | Single | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 79 W | |
| Minimum Operating Temperature | -55 °C | |
| Typical Turn-On Delay Time | 10 ns | |
| Transistor Material | Si | |
| Dimensions | 10 x 9.25 x 4.4mm | |
| Length | 10mm | |
| Maximum Operating Temperature | +175 °C | |
| Series | OptiMOS T2 | |
| Height | 4.4mm | |
| Number of Elements per Chip | 1 | |
| Width | 9.25mm | |
| Typical Turn-Off Delay Time | 50 ns | |
| Typical Input Capacitance @ Vds | 4370 pF @ 25 V | |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Maximum Drain Source Resistance 11.3 mΩ | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Package Type TO-263 | ||
Mounting Type Surface Mount | ||
Transistor Configuration Single | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Category Power MOSFET | ||
Maximum Power Dissipation 79 W | ||
Minimum Operating Temperature -55 °C | ||
Typical Turn-On Delay Time 10 ns | ||
Transistor Material Si | ||
Dimensions 10 x 9.25 x 4.4mm | ||
Length 10mm | ||
Maximum Operating Temperature +175 °C | ||
Series OptiMOS T2 | ||
Height 4.4mm | ||
Number of Elements per Chip 1 | ||
Width 9.25mm | ||
Typical Turn-Off Delay Time 50 ns | ||
Typical Input Capacitance @ Vds 4370 pF @ 25 V | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
해당 안됨